Molecular beam epitaxial growth of topological insulators.

Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates

Epitaxial growth of topological insulator bismuth telluride by molecular beam epitaxy onto BaF2 (111) substrates is studied using Bi2Te3 and Te as source materials. By changing the beam flux composition, different stoichiometric phases are obtained, resulting in high quality Bi2Te3 and Bi1Te1 epilayers as shown by Raman spectroscopy and high-resolution X-ray diffraction. From X-ray reciprocal s...

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators.

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dua...

Homoepitaxial SrTiO3(111) Film with High Dielectric Performance and Atomically Well-Defined Surface

The six-fold symmetry possessed by the (111) surfaces of perovskite oxides allows the epitaxial growth of novel quantum materials such as topological insulators. The dielectric SrTiO3(111) thin film is an ideal buffer layer, providing the readily tunability of charge density in gate-controlled structures. But the high-quality film growth is challenging due to its strong surface polarity as well...

A ferromagnetic insulating substrate for the epitaxial growth of topological insulators

insulators Huiwen Ji, R. A. Stokes, L. D. Alegria, E. C. Blomberg, M. A. Tanatar, Anjan Reijnders, L. M. Schoop, Tian Liang, R. Prozorov, K. S. Burch, N. P. Ong, J. R. Petta, and R. J. Cava Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA Department of Physics, Princeton University, Princeton, New Jersey 08544, USA Ames Laboratory and Department of Physics and Ast...